OPERATION METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: An operation method of a semiconductor device are provided to divide an erase mode and an input mode by controlling timing and a voltage level of voltage pulse. CONSTITUTION: A data state of a semiconductor device is changed into a first state in an erase mode. In the erase mode, a gate voltage pulse is transited from an enable state to a standby state after a drain voltage, supplied to a gate region(130), is transited from an enable state to a standby state. The data state of a conductive device is changed a second state in a write mode. In the write mode, a gate voltage pulse is transited from an enable state to a standby state, and then a drain voltage is transited from an enable state to a standby state.