| 摘要 |
Interconnects for integrated circuits, such as damascene structures are formed using a hard mask. The hard mask is formed from, for example, high-k dielectric material such as hafnium oxide or other materials having high etch selectivity to the interconnect dielectric material. This enables a thin mask to etch vias and trenches in the interconnect dielectric layer, avoiding the problems associated with the use of thick: mask layers, such as contact hole striations and small depth of focus, which can result in shorts or opens. Fig. 15
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