| 发明名称 |
METHOD OF MODIFYING INSULATING FILM |
| 摘要 |
An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.
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| 申请公布号 |
US2010105215(A1) |
申请公布日期 |
2010.04.29 |
| 申请号 |
US20090632131 |
申请日期 |
2009.12.07 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SUGAWARA TAKUYA;TADA YOSHIHIDE;NAKAMURA GENJI;OZAKI SHIGENORI;NAKANISHI TOSHIO;SASAKI MASARU;MATSUYAMA SEIJI;HASEBE KAZUHIDE;NAKAJIMA SHIGERU;FUJIWARA TOMONORI |
| 分类号 |
H01L21/31;H01L21/316;H01L21/28;H01L21/314;H01L21/8242;H01L27/108;H01L29/51;H01L29/78 |
主分类号 |
H01L21/31 |
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