SPUTTERING TARGET FOR FORMING THIN FILM TRANSISTOR WIRING FILM

摘要

Provided is a sputtering target for forming a thin film transistor wiring film.  The sputtering target contains 0.1 to 5 atomic % of Mg, 0.1 to 10 atomic % of Ca, and Cu and inevitable impurities as the remaining part.  Moreover, the sputtering target may contain a total of 0.1 to 10 atomic % of Mn or/and Al.  Furthermore, the sputtering target may contain 0.001 to 0.1 atomic % of P.