发明名称 |
METHOD FOR THE PRODUCTION OF POLYCRYSTALLINE SILICON |
摘要 |
The process for the production of polycrystalline silicon starting from metallurgical silicon, milled up to a predetermined granulometry, implies the reaction of metallurgical silicon with anhydrous hydrogen fluoride (HF), to obtain silicon tetrafluoride (SiF4), and to operate the synthesis of monosilane (SiH4) by a reaction of hydrogenation of the silicon tetrafluoride (SiF4) with alkaline or alkaline earth metals halide in fluid medium of organic solvent or melt salts. Then a thermal decomposition of said monosilane (SiH4) in a boiling-pseudo fluidized bed reactor is carried out, to obtain high purity granulated polycrystalline silicon. |
申请公布号 |
WO2010046751(A2) |
申请公布日期 |
2010.04.29 |
申请号 |
WO2009IB07166 |
申请日期 |
2009.10.20 |
申请人 |
SUNLIT S.R.L.;TOZZOLI, SILVIO;PUSHKO, ANATOLI, VASILIEVICH |
发明人 |
TOZZOLI, SILVIO;PUSHKO, ANATOLI, VASILIEVICH |
分类号 |
C01B33/039;C01B33/029;C01B33/037;C01B33/04;C01B33/107 |
主分类号 |
C01B33/039 |
代理机构 |
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代理人 |
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地址 |
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