发明名称 METHOD FOR THE PRODUCTION OF POLYCRYSTALLINE SILICON
摘要 The process for the production of polycrystalline silicon starting from metallurgical silicon, milled up to a predetermined granulometry, implies the reaction of metallurgical silicon with anhydrous hydrogen fluoride (HF), to obtain silicon tetrafluoride (SiF4), and to operate the synthesis of monosilane (SiH4) by a reaction of hydrogenation of the silicon tetrafluoride (SiF4) with alkaline or alkaline earth metals halide in fluid medium of organic solvent or melt salts. Then a thermal decomposition of said monosilane (SiH4) in a boiling-pseudo fluidized bed reactor is carried out, to obtain high purity granulated polycrystalline silicon.
申请公布号 WO2010046751(A2) 申请公布日期 2010.04.29
申请号 WO2009IB07166 申请日期 2009.10.20
申请人 SUNLIT S.R.L.;TOZZOLI, SILVIO;PUSHKO, ANATOLI, VASILIEVICH 发明人 TOZZOLI, SILVIO;PUSHKO, ANATOLI, VASILIEVICH
分类号 C01B33/039;C01B33/029;C01B33/037;C01B33/04;C01B33/107 主分类号 C01B33/039
代理机构 代理人
主权项
地址