| 摘要 |
A method for manufacturing a TFT array panel is presented. The method includes: forming a gate line and a gate electrode on a substrate with a first mask; depositing an insulation layer on the gate line and on the gate electrode; depositing a semiconductor layer; depositing an n+ amorphous silicon layer; forming a data line, a source electrode and a drain electrode on the substrate with a second mask; removing the exposed portion of the n+ amorphous silicon layer; forming a passivation film on the semiconductor layer, the n+ amorphous silicon layer, the data line, the source electrode and the drain electrode by using a third mask such that a portion of the drain electrode and the semiconductor layer is exposed; removing the exposed portion of the semiconductor layer; and forming a pixel electrode connected to the exposed portion of the drain electrode by using a fourth mask. |
