PRECHARGE CONTROL CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE AND PRECHARGE CONTROL METHOD IN SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A precharge control circuit and a control method thereof are provided to normally execute an active operation and a precharge operation by stopping the operation of a bit line sensing amplifier using a pulse back edge of a sub word line precharge pulse signal. CONSTITUTION: A sub word line drive control circuit(210) precharges a voltage of bit line pair and answers to a signal directing a precharge operation. The sub word line drive control circuit generates a sub word line precharge pulse signal resetting the sub word line driving signal driving the sub word line. A delay circuit(220) delays the sub word line precharge pulse signal. The delay circuit generates a block selection precharge pulse signal resetting the block selection signal. A precharge/equalizing signal generating circuit responds to the sub word line precharge pulse signal, and a pulse back edge of the block selection precharge pulse signal. The precharge/equalizing signal generating circuit(500) generates the precharge/equalization signal and precharges a voltage of a bit line pair.