METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the failure of overlay reading due to the collapse of a pattern in an exposure process by forming a vernier pattern to be identical to a pattern in a cell region. CONSTITUTION: A first pattern with a longitudinal axis is formed on the upper side of a layer to be etched, which includes a semiconductor substrate(100). The direction of the longitudinal axis is identical to the longitudinal axis of a pattern in a cell region. Spacers are formed on the both side of the first pattern. The first pattern is removed. The spacers are separated by an exposure process. An internal vernier pattern(160) and an external vernier pattern(165) are formed. The vernier patterns are used as an etching mask in order to etch the layer.