METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve the yield of the semiconductor device using a spin-on-carbon layer and a nitride layer spacer instead of a poly layer and an oxide layer spacer. CONSTITUTION: A first hard mask pattern(245) is formed on a layer to be etched. A spacer(260) is formed on the first hard mask pattern. A second hard mask layer is deposed on the spacer. An anti-reflection layer is deposited on a second hard mask layer. The anti-reflection layer and the second hard mask layer are patterned. A second pattern(285) is formed. The height of the first hard mask layer pattern and the second hard mask layer pattern are substantially identical.