PHASE CHANGE RAM DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A phase change ram device and a method for manufacturing the same are provided to prevent the oxidation of a phase change layer by preventing the penetration of oxygen of an interlayer oxide layer to the phase change layer. CONSTITUTION: A phase change layer(110) is formed on the upper side of a semiconductor substrate. A stacked pattern is composed of the phase change layer and an upper electrode. An anti-reflection layer(122) is formed on the upper side of the upper electrode. A capping layer(130) is formed on the both wall of the phase change layer. A heat transmissive thin film including the capping layer is formed on the entire surface of the phase change layer, the stacked pattern of an upper electrode and an anti-reflection layer.