| 摘要 |
Both sides of a large diameter semiconductor wafer are polished by the following ordered steps: a) polishing the wafer backside on a polishing pad containing a fixed abrasive, a polishing agent solution free of solids being introduced between the wafer backside and the polishing pad; b) stock polishing the wafer frontside on a polishing pad which contains a fixed abrasive, a polishing agent solution free of solids being introduced between the wafer frontside of and the polishing pad; c) removing microroughness and microdamage from the wafer frontside by polishing the frontside on a polishing pad, a polishing agent solution containing abrasives being introduced between the wafer frontside and the polishing pad; and d) final polishing of the wafer frontside by polishing the frontside on a polishing pad containing no fixed abrasive, a polishing agent solution containing abrasives being introduced between the wafer frontside and the polishing pad during the polishing step.
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