THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
摘要
<p>A thin film transistor is provided with a gate electrode, a gate insulating film, an oxide semiconductor film in contact with the gate insulating film, and source/drain electrodes which are connected to the oxide semiconductor film and are separated with a channel section therebetween. The oxide semiconductor film is composed of a crystalline indium oxide containing hydrogen element, and the content rate of the hydrogen element contained in the oxide semiconductor film to the total elements forming the oxide semiconductor film is 0.1-5 at%.</p>
