| 摘要 |
PURPOSE: A resist lower film fabricating method, a pattern producing method using thereof, and a resist lower film material are provided to improve etching resistance, high heat resistance and a solvent resistance, and to produce a resist lower film without twisting during an etching process. CONSTITUTION: A resist lower film fabricating method comprises the following steps: coating a resist lower film material containing a novolac type resin including a bisnaphthol group marked as the chemical formula 1; and heat-treating the resist lower film material at 300~600 deg C for 10~600 seconds for curing the resist lower film material. At the chemical formula 1, R1 and R2 is selected from the group consisting of a hydrogen atom, an alkyl group in a straight chain, branched, or cyclic shape, an aryl group with the carbon number of 6~20 or an arkenyl group with the carbon number of 2~20. R3 and R4 is the hydrogen atom and a glycidyl group, respectively.
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