发明名称 FABRICATION METHOD OF NANOWIRES CONTAINING NANOPARTICLES AND NONVOLATILE MEMORY DEVICES UTILIZING THE SAME
摘要 PURPOSE: Methods for manufacturing nano-wires including nano-particles and nonvolatile memory devices using the same are provided to adjust the size of the nano-particles by controlling the intensity of electronic beam. CONSTITUTION: The raw material solution of metal nano-particles is mixed to the raw material solution of inorganic nano-wires(S1). The mixture is electro-spinned in order to form nano-wires(S2). A thermal treatment is performed to form metal oxide nano-particles in the nano-wires(S3). Electronic beam is injected into the nano-wires in order to form the metal nano-particles(S4).
申请公布号 KR20100043465(A) 申请公布日期 2010.04.29
申请号 KR20080102512 申请日期 2008.10.20
申请人 IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) 发明人 KIM, TAE WHAN;JUNG, JAE HUN;SHIN, JAE WON;LEE, JEONG YONG
分类号 H01L21/8247 主分类号 H01L21/8247
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