| 摘要 |
A magnetoresistive element includes first and second shield portions and an MR stack. Each of the first and second shield portions includes a shield bias magnetic field applying layer, and a closed-magnetic-path-forming portion that forms a closed magnetic path in conjunction of the shield bias magnetic field applying layer. The closed-magnetic-path-forming portion includes a single magnetic domain portion. The MR stack is sandwiched between the respective single magnetic domain portions of the first and second shield portions. The closed-magnetic-path-forming portion includes a magnetic-path-expanding portion that forms a magnetic path, the magnetic path being a portion of the closed magnetic path and located between the shield bias magnetic field applying layer and the single magnetic domain portion. The magnetic-path-expanding portion has two end portions located at both ends of the magnetic path, and a middle portion located between the two end portions. A cross section of the magnetic path at the middle portion is greater in width than a cross section of the magnetic path at each of the two end portions.
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