Verfahren zur Herstellung eines Halbleiterbauelements umfassend ein chemisch-mechanisches Mehrschrittpolierverfahren für einen Gatebereich in einem FINFET

摘要

A method of manufacturing a MOSFET type semiconductor device includes planarizing a gate material layer that is deposited over a channel. The planarization is performed in a multi-step process that includes an initial "rough" planarization and then a "fine" planarization. The slurry used for the finer planarization may include added material that tends to adhere to low areas of the gate material.