THIN FILM TRANSISTOR HAVING HIGH-PURITY CRYSTALLINE INDIUM OXIDE SEMICONDUCTOR FILM, AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR
摘要
<p>Disclosed is a thin film transistor wherein a crystalline indium oxide semiconductor film is provided and the content rate of metal elements having a valency of +4 or higher to the total metal elements contained in the semiconductor film is 10 atm ppm or less.</p>
