<p>A semiconductor device comprises a first inter-layer insulating film (10) formed on a semiconductor substrate; a first primary wiring part (14c) formed in the first inter-layer insulating film (10); a second inter-layer insulating film (16) formed above the first inter-layer insulating film (10); and a first secondary wiring part (20c) formed in the second inter-layer insulating film (16) and connected to the first primary wiring part (14c). The first primary wiring part (14c) and first secondary wiring part (20c) constitute a first wiring (20C).</p>
