| 摘要 |
PURPOSE: A photoresist developer composition and a pattern formation method a semiconductor device using thereof are provided to obtain the reproducibility of a pattern, and to improve the entire processing efficiency. CONSTITUTION: A photoresist developer composition contains an amino acid derivative, ultra-pure water, and an additive selected from the group consisting of amine-based compounds, a surfactant and alcohol compounds. The amino acid derivative is a weak basic compound with the molecular weight of 75~300 and the acid-ionization constant of 7~10 marked as the chemical formula 1. In the chemical formula 1, R1 and R2 is selected from the group consisting of alkyl with the carbon number 1~20, hydroxy alkyl with the carbon number 1~20, alkoxy alkyl with the carbon number 2~20 and others. N is a real number selected from 0 to 15. |
