| 摘要 |
The present invention aims at providing a semiconductor device that can prevent quality degradation of a signal caused by noise, reduce a malfunction of a circuit caused by latch-up, and secure favorable isolation, and the semiconductor device includes: a first layer with a resistivity higher than 10·cm and lower than 1 k·cm which is formed in a semiconductor substrate; a second layer formed on a surface of the semiconductor substrate so as to be located above the first layer; two semiconductor devices formed in the second layer or on the second layer; and a trench-type insulating region which is located between the two semiconductor devices, is formed in the semiconductor substrate so as to reach the first layer from the surface of the semiconductor substrate, and electrically isolates the two semiconductor devices.
|
