RESIST MATERIAL AND PATTERN FORMING METHOD USING THE SAME

摘要

A resist film (102) composed of a resist material, which contains a first polymer containing a lactone but not containing an acid-labile group, a second polymer containing an acid-labile group, and a photoacid generator, is formed on a substrate (101).  Then a pattern exposure is carried out by selectively irradiating the resist film (102) with exposure light which is composed of extreme ultraviolet light.  Subsequently, the pattern-exposed resist film is developed, thereby forming a resist pattern (102a) from the resist film.