NON-VOLATILE STORAGE DEVICE AND METHOD OF WRITING TO MEMORY CELL

摘要

Provided is a non-volatile storage device in which stable operation can be achieved without increasing the size of the selection transistor constituting each memory cell. This non-volatile storage device (200) comprises: a semiconductor circuit board (301) having a P-type well (301a) of a first conductivity type; a memory cell array (202) equipped with a plurality of memory cells (M11) etc. constituted by connecting in series transistors (N11) and variable-resistance elements (R11) formed on the semiconductor circuit board (301); and a circuit board bias circuit (220) that applies a bias voltage VB so as to apply bias in the forward direction with respect to the source and drain of the transistor (N11) to the P-type well (301a), when a voltage pulse for writing to the variable-resistance element (R11) constituting a selected memory cell (M11) etc. is applied.