| 发明名称 |
Gated diode with increased voltage tolerance |
| 摘要 |
In a gated diode ESD protection structure, the gate is biased to a voltage higher than ground and gate size is reduced while ensuring adequate spacing between p+ and n+ regions of the diode by blocking at least one of n-lightly doped region and p-lightly doped region.
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| 申请公布号 |
US2010102390(A1) |
申请公布日期 |
2010.04.29 |
| 申请号 |
US20080290060 |
申请日期 |
2008.10.27 |
| 申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
VASHCHENKO VLADISLAV;KORABLEV KONSTANTIN G. |
| 分类号 |
H01L29/00;H01L21/336 |
主分类号 |
H01L29/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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