The present application describes a crossbar memory array. The memory array includes a first array of parallel nanowires of a first material and a second array of parallel nanowires of a second material. The first and the second array are oriented at an angle with each other. The array further includes a plurality of nanostructures of non-crystalline silicon disposed between a nanowire of the first material and a nanowire of the second material at each intersection of the two arrays. The nanostructures form a resistive memory cell together with the nanowires of the first and second materials.
申请公布号
WO2010048127(A2)
申请公布日期
2010.04.29
申请号
WO2009US61249
申请日期
2009.10.20
申请人
THE REGENTS OF THE UNIVERSITY OF MICHIGAN;LU, WEI;JO, SUNG, HYUN;KIM, KUK-HWAN