| 摘要 |
<p>The present invention provides a double-layered crucible for growth of a single oxide crystal, for example a PMN-PT crystal, a PIN-PT crystal, a PZN-PT crystal, a PYN-PT crystal, etc., including lead (Pb). In particular, the double-layered crucible of the present invention is configured such that an inner crucible body (20) is fitted into an outer crucible body (30) having the same shape to that of the inner crucible body.</p> |
