发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTORDEVICE |
摘要 |
An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-stagger thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. The etching step is performed by wet etching in which an etching solution is used. |
申请公布号 |
WO2010047288(A1) |
申请公布日期 |
2010.04.29 |
申请号 |
WO2009JP67955 |
申请日期 |
2009.10.09 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;ITO, SHUNICHI;HOSOBA, MIYUKI |
发明人 |
ITO, SHUNICHI;HOSOBA, MIYUKI |
分类号 |
H01L29/786;G02F1/1368;H01L21/28;H01L21/336;H01L29/417;H01L29/423;H01L29/49;H01L51/50;H05B33/08 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|