发明名称 |
Pnp bipolar transistor with lateral collector and method of production |
摘要 |
<p>A base contact connection (12), an emitter structure (4, 5) and a collector structure are arranged on an n-layer (3), which can be provided for additional npn transistors. The collector structure is arranged laterally to the emitter structure and may comprise a collector Schottky contact (14) on a surface area of the n-layer.</p> |
申请公布号 |
EP2180517(A1) |
申请公布日期 |
2010.04.28 |
申请号 |
EP20080167538 |
申请日期 |
2008.10.24 |
申请人 |
EPCOS AG |
发明人 |
VAN DEN OEVER, LEON C. M. |
分类号 |
H01L29/417;H01L29/47;H01L29/73;H01L29/735 |
主分类号 |
H01L29/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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