| 摘要 |
<p>A wafer level chip scale packaged device (WLCSP) comprises a semiconductor die 301 and a first dielectric layer 303 which is formed such that it terminates (308, Figure 4) on the die within a plurality of pads 309 arranged around the periphery of an active face of the die 301. The termination (308, Figure 4) may be achieved by deposition, patterning or etching. Tracks 305 are then formed in a conductive layer which contacts one of the pads 306, and runs over the edge of an opening onto the surface of the first dielectric layer 303. The tracks may be used to form an electrical connection between the pads 306 and a solder ball 307. A second dielectric layer 304 encapsulates the active face. The dielectric layers may be benzocyclobutene (BCB), polybenzoxazole (PBO), polymide (PI) or another polymer method of fabricating the device is also claimed.</p> |
