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发明名称
Procédé pour créer une zone dopée de type p dans un corps semi-conducteur monocristallin, de préférence en silicium
摘要
申请公布号
FR1428479(A)
申请公布日期
1966.02.18
申请号
FR19640961326
申请日期
1964.01.23
申请人
SIEMENS-SCHUCKERTWERKE AKTIENGESELLSCHAFT
发明人
分类号
H01L21/223
主分类号
H01L21/223
代理机构
代理人
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