| 摘要 |
Embodiments relate to a high voltage semiconductor device. The device includes a substrate having impurities of a first conductivity and having a first surface and a second surface, a gate electrode over the first surface, an LDD region having low concentration impurities of a second conductivity doped in the substrate at a first side of the gate electrode, a drain region having high concentration impurities of the second conductivity doped in the LDD region, a source region having high concentration impurities of the second conductivity doped in the substrate at a second side of the gate electrode, and spacers formed at sidewalls of the gate electrode. The first surface is higher than the second surface, and the source and LDD regions are at least partially formed in a region at the second surface. A bottom side of one of the spacers directly contacts the LLD region.
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