发明名称 |
Semiconductor device for measuring an overlay error, method for measuring an overlay error, lithographic apparatus and device manufacturing method |
摘要 |
A semiconductor device for determining an overlay error on a semiconductor substrate includes a first and a second transistor. Each transistor includes two diffusion regions associated with a gate, the diffusion regions of each transistor being arranged in a first direction. The second transistor is arranged adjacent to the first transistor in a second direction perpendicular to the first direction. The first and second gate each have a non-uniform shape, and the second gate is oriented with respect to an orientation of the first gate in such a way that an effect of an overlay error on a device parameter of the second transistor has an opposite sign in comparison to an effect of the overlay error on a corresponding device parameter of the first transistor.
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申请公布号 |
US7704850(B2) |
申请公布日期 |
2010.04.27 |
申请号 |
US20060517571 |
申请日期 |
2006.09.08 |
申请人 |
ASML NETHERLANDS B.V. |
发明人 |
DUSA MIRCEA;NACKAERTS AXEL;VERHAEGEN GUSTAAF |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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