| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve electron mobility by forming a linear oxide layer and a liner nitride layer on a device isolation trench. CONSTITUTION: A device isolation trench(208) is formed by etching a semiconductor substrate. A liner oxide layer(210) is formed on the inner surface of the device isolation trench. A plasma process is performed on the upper side of the semiconductor substrate on which the linear oxide layer is formed. The linear nitride layer is formed on the semiconductor substrate. An insulation material is filled in the trench with the liner oxide layer and the liner nitride layer. The upper side of the filled insulation material is planarized.
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