| 摘要 |
According to an aspect of the invention, there is provided an amplification-type solid-state image sensing device which uses a semiconductor substrate formed by epitaxially depositing an n-type semiconductor layer on a p-type semiconductor substrate and has a photoelectric conversion unit formed in the n-type semiconductor layer including a first p-type semiconductor layer which is formed under the photoelectric conversion unit of at least one of a G pixel portion and a B pixel portion a second p-type semiconductor layer which is formed to surround the photoelectric conversion unit together with the first p-type semiconductor layer and has a depth up to the first p-type semiconductor layer and a third p-type semiconductor layer which is formed to surround an R pixel portion and has a depth up to the p-type semiconductor substrate.
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