发明名称 Semiconductor device, wiring substrate forming method, and substrate processing apparatus
摘要 A substrate support (201) having a flat supporting surface (201a) is prepared, and a semiconductor substrate (1) is fixed to the substrate supporting surface (201) by attaching a wiring forming surface (1a) to the supporting surface (201a) by suction, for example, by vacuum suction. On this occasion, the wiring forming surface (1a) is forcibly flattened by being attached to the supporting surface (201a) by suction, and therefore the wiring forming surface (1a) becomes a reference plane for planarization of a back surface (1b). In this state, planarization processing is performed by mechanically grinding the back surface (1b) to grind away projecting portions (12) of the back surface (1b). Hence, variations in the thickness of the substrate (especially, semiconductor substrate) are made uniform, and high-speed planarization is realized easily and inexpensively without disadvantages such as dishing and without any limitation on a wiring design.
申请公布号 US7704856(B2) 申请公布日期 2010.04.27
申请号 US20070727003 申请日期 2007.03.23
申请人 FUJITSU LIMITED 发明人 NAKAGAWA KANAE;MIZUKOSHI MASATAKA;TESHIROGI KAZUO
分类号 H01L21/30;H01L21/3105;H01L21/321;H01L21/44;H01L21/4763;H01L21/48;H01L21/68;H01L21/768 主分类号 H01L21/30
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