发明名称 |
Annealing to improve edge roughness in semiconductor technology |
摘要 |
A method for manufacturing a semiconductor device. The method comprises depositing a material layer on a semiconductor substrate and patterning the material layer with a patterning material. Patterning forms a patterned structure of a semiconductor device, wherein the patterned structure has a sidewall with a roughness associated therewith. The method also comprises removing the patterning material from the patterned structure and annealing an outer surface of the patterned structure such that the roughness is reduced.
|
申请公布号 |
US7704883(B2) |
申请公布日期 |
2010.04.27 |
申请号 |
US20060615456 |
申请日期 |
2006.12.22 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BUTLER STEPHANIE W.;CHEN YUANNING |
分类号 |
H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|