SINGLE CRYSTAL THIN FILM OF USING METAL SILICIDE SEED LAYER, AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A single crystal thin film by a metal silicide seed layer and a manufacturing method thereof are provided to improve the quality of a compound single crystal thin film by forming a metal silicide seed layer between a single crystal layer and a substrate. CONSTITUTION: An insulation layer is deposited on a substrate(S200). A polycrystal or amorphous silicon layer is deposited on the insulation layer(S210). The metal is deposited on the polycrystal and amorphous silicon layer and then the thin film is formed(S220). A metal silicide layer is formed by thermally processing the substrate with a metal thin film(S230). A single crystal layer is grown up on the metal silicide layer(S240).