发明名称 |
Programmable ESD protection structure |
摘要 |
In a LVTSCR or snapback NMOS ESD structure, low voltage protection as well as higher voltage protection is provided by introducing a floating gate that capacitively couples with the control gate of the ESD structure and programming the floating gate to have different charges on it as desired.
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申请公布号 |
US7705403(B1) |
申请公布日期 |
2010.04.27 |
申请号 |
US20060324455 |
申请日期 |
2006.01.03 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
VASHCHENKO VLADISLAV;MIRGORODSKI YURI;HOPPER PETER J. |
分类号 |
H01L23/62 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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