发明名称 |
Silicon-on-insulator chip with multiple crystal orientations |
摘要 |
A silicon-on-insulator chip includes an insulator layer, typically formed over a substrate. A first silicon island with a surface of a first crystal orientation overlies the insulator layer and a second silicon island with a surface of a second crystal orientation also overlies the insulator layer. In one embodiment, the silicon-on-insulator chip also includes a first transistor of a first conduction type formed on the first silicon island, and a second transistor of a second conduction type formed on the second silicon island. For example, the first crystal orientation can be (110) while the first transistor is a p-channel transistor, and the second crystal orientation can be (100) while the second transistor is an n-channel transistor.
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申请公布号 |
US7704809(B2) |
申请公布日期 |
2010.04.27 |
申请号 |
US20080050692 |
申请日期 |
2008.03.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YEO YEE-CHIA;YANG FU-LIANG |
分类号 |
H01L21/00;H01L21/84;H01L27/12 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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