MUTI-LEVEL-CELL NON-VOLATILE MEMORY DEVICE USING CHARGE TRAPPING REGION

摘要

PURPOSE: A multi level cell nonvolatile memory device is provided to overcome interference between devices due to a scale down using a charge trap region to localize and stores a charge. CONSTITUTION: A semiconductor substrate(101) comprises three source/drain regions(105a) per unit cell or more. A charge trapping insulation unit is formed on a semiconductor substrate. The charge trapping insulation unit includes a charge trap region which traps the charge according to the voltage applied to the source/drain region. A gate electrode(150) is formed on the charge trapping insulation unit. The gate electrode has a flat shape of N polygons. The charge trapping region provides a charge trap site which localizes the charge and stores the charge. The source/drain region is arranged on angular points of N polygon formed by the gate electrode.