| 摘要 |
A semiconductor porcelain composition [(BiNa)x(Ba1-yRy)1-x]TiO3 with 0<x≦̸0.2, 0<y≦̸0.02 and R being selected from the group consisting of La, Dy, Eu, Gd or Y is prepared by separately calcining a composition of (BaR)TiO3 at a temperature of 900° C. through 1300° C. and calcining a composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing the two calcined powders and forming and sintering the mixed calcined powder. Similarly, a semiconductor porcelain composition [(BiNa)x(Ba1-x][Ti1-zMz]O3 with 0<x≦̸0.2, 0<z≦̸0.005 and M being selected from the group consisting of Nb, Ta and Sb is prepared by separately calcining a composition of (BaM)TiO3 at a temperature of 900° C. through 1300° C. and calcining a composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing the two calcined powders, and forming and sintering the mixed calcined powders.
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