SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD

摘要

Intended is to manufacture a semiconductor device including a shallow trench element separating region and an inter-layer insulating film of a multi-layered structure. A method for manufacturing the semiconductor device has to use a CMP repeatedly, but this CMP itself takes a high cost so that the manufacturing cost is raised by the repeated uses of the CMP. The insulating film to be used in a shallow trench (ST) element separating region and/or the inter-layer insulating film as the lowermost layer is exemplified by an insulating coating film, which can be applied by a spin-coating method. This insulating coating film has such a composition as is expressed by (CH)SiO)(SiO)(wherein n = 1 to 3, and 0 <= x <= 1.0), and a film of a different specific dielectric constant k is formed by selecting a heat-treatment condition. Moreover, an STI element separating region can be formed by modifying the insulating coating film completely into an SiOfilm, and the inter-layer insulating film of the small dielectric constant k can be formed by making it into an incompletely modified state.