发明名称 |
Methods for the formation of fully silicided metal gates |
摘要 |
An advanced gate structure that includes a fully silicided metal gate and silicided source and drain regions in which the fully silicided metal gate has a thickness that is greater than the thickness of the silicided source/drain regions is provided. Methods of forming the advanced gate structure are also provided.
|
申请公布号 |
US7705405(B2) |
申请公布日期 |
2010.04.27 |
申请号 |
US20040885462 |
申请日期 |
2004.07.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BIERY GLENN A.;STEEN MICHELLE L. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|