Method for fabricating semiconductor device having conductive liner for rad hard total dose immunity

摘要

The invention relates to a method includes etching at least one shallow trench in at least an SIO layer; forming a dielectric liner at an interface of the SIO layer and the SIO layer; forming a metal or metal alloy layer in the shallow trench on the dielectric liner; and filling the shallow trench with oxide material over the metal or metal alloy.