| 摘要 |
A fast active DCAP cell which has a short turn-on time, achieves a high capacitance density, and which minimizes leakage overhead during its normal operation mode is disclosed. The DCAP cell has a pair of PMOS transistors that have their drains connected to a gate of a PMOS transistor and their sources connected to the VDD rail. The drain and source of the PMOS transistor are connected to the VSS rail. Likewise, the DCAP cell has a pair of NMOS transistors that have their drains connected to a gate of an PMOS transistor and their sources connected to the VSS rail. The drain and source of the PMOS transistor are connected to the VDD rail. None of the gates of the transistors is connected to the VDD or VSS rail. This protects the gate oxide from being damaged by ESD surge currents.
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