| 摘要 |
According to the present invention, a SOI substrate includes a first silicon substrate having first and second surfaces; a second silicon substrate having first and second surfaces; and a first insulating layer formed between first surface of the first silicon substrate and the first surface of the second silicon substrates. The first surface of the first silicon substrate is partly depressed to form a thin-layer region thereat. The first insulating layer is formed at least in the thin-layer region.
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