| 摘要 |
PURPOSE: A method for forming a contact hole of a semiconductor device is provided to form a minute contact hole using a double patterning and pattern reducing technology. CONSTITUTION: An etching layer is formed on a semiconductor substrate. A photosensitive layer is coated on the upper side of the etching layer. A first photosensitive pattern including a first contact hole is formed by patterning the photosensitive layer. A second photosensitive pattern with the reduced first contact hole is formed. A third photosensitive pattern(300) is formed by forming a second contact hole(15) on the second photosensitive pattern. A forth photosensitive pattern with the reduced second contact hole is formed.
|
