| 摘要 |
<p>PURPOSE: A method for forming a pattern of a semiconductor device is provided to form a pattern without a pattern lifting phenomenon in the following patterning process by not removing a spacer layer formed on a hard mask pattern sidewall on a scribe lane region. CONSTITUTION: An etching layer(210) is formed on the upper side of a substrate(200) of a scribe lane region and a cell region. A hard mask pattern(220) is formed on the upper side of the etching layer. A spacer(230) is formed on the hard mask pattern sidewall. A photosensitive pattern(250) is formed on the hard mask pattern and the spacer of the scribe lane region. The spacer is removed on the cell region. The etching layer pattern is formed by etching the layer using the photosensitive pattern and the hard mask pattern as an etching mask.</p> |
