| 摘要 |
PURPOSE: A method for manufacturing a CMOS image sensor is provided to increase the amount of light reaching a photodiode by reducing diffusion reflection by stabilizing the surface state of an oxide layer. CONSTITUTION: An oxide layer is gap-filled on a semiconductor substrate(101) by forming a metal line(102) with the smaller number of layers than the layers of a metal line(103) of a peripheral region on a pixel region. A first SiN layer is formed on the oxide layer with deposition. The first SiN layer on the metal line of the minimum number of layers is removed on the pixel region of the semiconductor substrate by a dry etching process. A trench(108) is formed by wet-etching the oxide layer exposed by the dry etching of the first SiN layer. A second SiN layer(109) is formed on the front side of the semiconductor substrate with the trench by the deposition. A color filter array(110) and a micro lens are formed inside the trench after annealing the semiconductor substrate.
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