III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A third group nitride semiconductor light emitting device is provided to improve the external quantum efficiency of a light emitting device using a cavity with a high curvature. CONSTITUTION: A plurality of third group nitride semiconductor layers(30) is located on a substrate(10). The third group nitride semiconductor layers include an active layer(40) which generates light by recombining an electron and a hole. A scattering face(31) scatters the light which is generated from the active layer. The scattering face includes an etched first face and a second face which covers the first face.