| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to reduce the roughness on the surface of the image sensor by performing an annealing process on a carrier substrate on which the image sensor is formed. CONSTITUTION: A readout circuit(120) is formed on a semiconductor substrate(100). An interlayer insulation layer(160) with wirings(150) is formed on the semiconductor substrate to be connected with the readout circuit. A carrier substrate of a crystal structure is prepared. An image sensor(240) is formed on the carrier substrate by ion implantation. A hydrogen layer is formed on the boundary between the image sensor and the carrier substrate. An annealing process is performed on the carrier substrate. The carrier substrate is bonded to the interlayer insulation layer.
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